Effects of channel width variation on electrical characteristics of tri-gate Junctionless transistors

Author:

Jeon Dae-Young,Park So Jeong,Mouis Mireille,Barraud Sylvain,Kim Gyu-Tae,Ghibaudo Gérard

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Nanowire transistors without junctions;Colinge;Nat Nanotechnol,2010

2. Electronic devices: nanowire transistors made easy;Ionescu;Nat Nanotechnol,2010

3. Performance estimation of junctionless multigate transistors;Lee;Solid-State Electron,2010

4. Reduced electric field in junctionless transistors;Colinge;Appl Phys Lett,2010

5. Jeon D-Y, Park SJ, Mouis M, Berthome M, Barraud S, Kim G-T, Ghibaudo G. Electrical characterization and revisited parameter extraction methodology in junctionless transistors. In: Proceedings of EuroSOI conference, Montpellier, France; 2012. p. 109–10.

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