Electroluminescence from metal-oxide-semiconductor devices with erbium-doped CeO2 films on silicon-Reference-Cited by-同舟云学术

Electroluminescence from metal-oxide-semiconductor devices with erbium-doped CeO2 films on silicon

Published:2015-04-06 Issue:14 Volume:106 Page:141102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lv Chunyan¹²,Zhu Chen¹,Wang Canxing¹,Gao Yuhan¹,Ma Xiangyang¹,Yang Deren¹

Affiliation:

1. State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China

2. Department of Chemistry, Huzhou University, Zhejiang, Huzhou 313000, People's Republic of China

Funder

National Natural Science Foundation of China (NSFC)

Ministry of Science and Technology of the People's Republic of China (Chinese Ministry of Science and Technology)

Natural Science Foundation of Zhejiang Province (Zhejiang Provincial Natural Science Foundation)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4917224

Reference22 articles.

1. Rare-Earth Implanted MOS Devices for Silicon Photonics

2. Nanosilicon photonics

3. Electroluminescence efficiencies of erbium in silicon-based hosts

4. The electroluminescence mechanism of Er3+ in different silicon oxide and silicon nitride environments

5. Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation

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