Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation-Reference-Cited by-同舟云学术

Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation

Published:2012-03-13 Issue:12 Volume:23 Page:125203
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Ramírez J M,Ferrarese Lupi F,Jambois O,Berencén Y,Navarro-Urrios D,Anopchenko A,Marconi A,Prtljaga N,Tengattini A,Pavesi L,Colonna J P,Fedeli J M,Garrido B

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/23/i=12/a=125203/pdf

Reference31 articles.

1. Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters

2. Energy transfer and 1.54 μm emission in amorphous silicon nitride films

3. Photoluminescence in erbium doped amorphous silicon oxycarbide thin films

4. Sensitization of Er luminescence by Si nanoclusters

5. Nanosecond Dynamics of the Near-Infrared Photoluminescence of Er-DopedSiO2Sensitized with Si Nanocrystals

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