The electroluminescence mechanism of Er3+ in different silicon oxide and silicon nitride environments-Reference-Cited by-同舟云学术

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The electroluminescence mechanism of Er3+ in different silicon oxide and silicon nitride environments

Published:2014-09-28 Issue:12 Volume:116 Page:123104
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Rebohle L.¹,Berencén Y.²,Wutzler R.¹,Braun M.¹,Hiller D.³,Ramírez J. M.²,Garrido B.²,Helm M.¹,Skorupa W.¹

Affiliation:

1. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden - Rossendorf, Bautzner Landstraße 400, 01328 Dresden, Germany

2. Dept. Electrònica, Martí i Franquès 1, Universitat de Barcelona, 08028 Barcelona, Spain

3. IMTEK, Faculty of Engineering, Albert-Ludwigs-University Freiburg, Georges-Köhler-Allee 103, 79110 Freiburg, Germany

Funder

Spanish Ministry of Science and Innovation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4896588

Reference29 articles.

1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

2. The electrical and electroluminescence properties of rare earth implanted MOS light emitting devices in the near infrared

3. Intense green-yellow electroluminescence from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices

4. Electroluminescence efficiencies of erbium in silicon-based hosts

5. Efficient ultraviolet electroluminescence from a Gd-implanted silicon metal–oxide–semiconductor device

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1. Controllable Design of Minority Carrier Diffusion in npn Devices for Enhancing Er³⁺-Related Electroluminescence;ACS Photonics;2024-04-01

2. Intense Violet Electroluminescence of Thin Sio2 Layers with Sno2 Nanocrystals;2024

3. Effect of Erbium Incorporation on SiN_xO_y/c-Si Interface in Silicon-Based Optoelectronic Devices;IEEE Transactions on Electron Devices;2023-11

4. Current Driving Er-Doped Electroluminescence Devices With Long-Term Reliability;IEEE Electron Device Letters;2023-03

5. Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped ZnO Films: Strong Enhancement Effect of Titanium Codoping;ACS Applied Materials & Interfaces;2022-09-21

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