Current Driving Er-Doped Electroluminescence Devices With Long-Term Reliability
Author:
Affiliation:
1. State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10053585/10013771.pdf?arnumber=10013771
Reference31 articles.
1. Electroluminescence from light-emitting device with erbium-doped TiO2 film sputtered onp+-Si substrate: Enhancement effect of codoping zirconium
2. Silicon-Based Optoelectronics
3. Efficient Er/O‐Doped Silicon Light‐Emitting Diodes at Communication Wavelength by Deep Cooling
4. Electroluminescent polycrystalline Er-doped Lu3Al5O12 nanofilms fabricated by atomic layer deposition on silicon
5. D.c. properties of ZnO thin films prepared by r.f. magnetron sputtering
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