Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped ZnO Films: Strong Enhancement Effect of Titanium Codoping
Author:
Affiliation:
1. State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People’s Republic of China
Funder
Ministry of Science and Technology of the People's Republic of China
National Natural Science Foundation of China
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.2c08003
Reference45 articles.
1. 1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy
2. 1.54 μm emission dynamics of erbium-doped zinc-oxide thin films
3. Electroluminescence of erbium-doped silicon films as grown by ion beam epitaxy
4. The electroluminescence mechanism of Er3+ in different silicon oxide and silicon nitride environments
5. Room‐temperature sharp line electroluminescence at λ=1.54 μm from an erbium‐doped, silicon light‐emitting diode
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