1.54 μm emission dynamics of erbium-doped zinc-oxide thin films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126826
Reference11 articles.
1. Evaluation of erbium‐doped silicon for optoelectronic applications
2. Room‐temperature sharp line electroluminescence at λ=1.54 μm from an erbium‐doped, silicon light‐emitting diode
3. Selective formation of an efficient Er‐O luminescence center in GaAs by metalorganic chemical vapor deposition under an atmosphere containing oxygen
4. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials
5. Er doped nanocrystalline ZnO planar waveguide structures for 1.55 μm amplifier applications
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