Electroluminescence of erbium-doped silicon films as grown by ion beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119480
Reference15 articles.
1. Temperature dependence of intra‐4f‐shell photo‐ and electroluminescence spectra for erbium‐doped GaAs
2. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon
3. 1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy
4. Optical Activation of Er3+Implanted in Silicon by Oxygen Impurities
5. Microstructure of erbium‐implanted Si
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1. Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped ZnO Films: Strong Enhancement Effect of Titanium Codoping;ACS Applied Materials & Interfaces;2022-09-21
2. Electroluminescence from light-emitting devices based on erbium-doped ZnO/n-Si heterostructures: Enhancement effect of fluorine co-doping;Optics Express;2019-10-10
3. Electroluminescence from silicon-based light-emitting devices with erbium-doped TiO2 films annealed at different temperatures;Journal of Applied Physics;2017-10-28
4. 1.54 µm Er3+ electroluminescence from an erbium-compound-doped organic light emitting diode with a p-type silicon anode;Journal of Physics D: Applied Physics;2006-06-16
5. Erbium in Semiconductors: Where are we coming from; Where are we going?;MRS Proceedings;2005
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