Electroluminescence from silicon-based light-emitting devices with erbium-doped TiO2 films annealed at different temperatures-Reference-Cited by-同舟云学术

Electroluminescence from silicon-based light-emitting devices with erbium-doped TiO2 films annealed at different temperatures

Published:2017-10-28 Issue:16 Volume:122 Page:163106
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chen Jinxin¹,Gao Zhifei¹,Jiang Miaomiao¹^ORCID,Gao Yuhan¹,Ma Xiangyang¹,Yang Deren¹

Affiliation:

1. State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China

Funder

National Key Basic Research Program of China(973 Program)

Program for Innovative Researh Team in University of Ministry of Education of China

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4997858

Reference22 articles.

1. Er-Doped ZnO Nanorod Arrays with Enhanced 1540 nm Emission By Employing Ag Island Films and High-Temperature Annealing

2. Rare earth doped Si-rich ZnO for multiband near-infrared light emitting devices

3. Routes toward silicon-based lasers

4. Light Emission From Er-Doped Si: Materials Properties, Mechanisms, and Device Performance

5. Electroluminescence of erbium-doped silicon films as grown by ion beam epitaxy

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