Abstract
Abstract
Near-infrared (NIR) electroluminescence (EL) devices based on Er3+ ions doped TiO2 emitting layer have been fabricated by employing a facile sol–gel method. The effect of Er3+ ion doping concentration on the EL performance of TiO2:Er3+ thin film devices was investigated. Moreover, a novel device with the core of TiO2:1%Er3+/ZnO heterostructure was designed and fabricated. The EL performance of the device with optimized Er3+ ion doping concentration and improved structure was significantly improved. The NIR EL-enabling voltage of the improved device is as low as ∼5 V. The attenuated concentration quenching effect and the ZnO film as an electron blocking layer should contribute to the improved EL performance of the optimized device.
Funder
Natural Science Foundation of China
Natural Science Research Key Project of Colleges and Universities of Anhui Province
Open Foundation Project of National Laboratory of Solid State Microstructures
Scientific Research Starting Foundation of Chuzhou University
Top Talents Academic Support Project of the Anhui Provincial Department of Education University Discipline (Major) of China
Leading Innovative and Entrepreneur Team Introduction Program of Hangzhou