1.54 µm Er3+ electroluminescence from an erbium-compound-doped organic light emitting diode with a p-type silicon anode-Reference-Cited by-同舟云学术

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1.54 µm Er3+ electroluminescence from an erbium-compound-doped organic light emitting diode with a p-type silicon anode

Published:2006-06-16 Issue:13 Volume:39 Page:2711-2714
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Zhao W Q,Wang P F,Ran G Z,Ma G L,Zhang B R,Liu W M,Wu S K,Dai L,Qin G G

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/39/i=13/a=013/pdf

Reference15 articles.

1. A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor

2. Ultracompact, multifunctional, and highly integrated 3×2 photonic switches

3. 1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy

4. Room‐temperature sharp line electroluminescence at λ=1.54 μm from an erbium‐doped, silicon light‐emitting diode

5. Electroluminescence of erbium-doped silicon films as grown by ion beam epitaxy

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 1530-nm electroluminescence from p-Ga2S3:Er/n+-Si heterojunctions induced by Zener tunneling;Applied Physics Letters;2023-12-18

2. Enhanced 1.54-μm photo- and electroluminescence based on a perfluorinated Er(III) complex utilizing an iridium(III) complex as a sensitizer;Light: Science & Applications;2020-03-04

3. OLEDs based on Ln(III) complexes for near-infrared emission;Lanthanide-Based Multifunctional Materials;2018

4. 1.54 mu n electroluminescence from ErQ doped ADN organic light-emitting diodes;J INFRARED MILLIM W;2014

5. Erbium photoluminescence in potential ErQ3 phosphor for organic LEDs;Technical Physics Letters;2011-08

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