Dual passivation of GaAs (110) surfaces using O2/H2O and trimethylaluminum
Author:
Publisher
AIP Publishing
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4852155
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1. Exploratory Materials and Devices to Advance CMOS beyond the Classical Si Roadmap
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4. Model of interface states at III-V oxide interfaces
5. Influence of trimethylaluminum on the growth and properties of HfO2/In0.53Ga0.47As interfaces
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2. Electronic structure and origin of intrinsic defects in sputtered HfTiO2 alloy dielectric on GaAs surface;Journal of Alloys and Compounds;2022-07
3. Modulating the Interface Chemistry and Electrical Properties of Sputtering-Driven HfYO/GaAs Gate Stacks by ALD Pulse Cycles and Thermal Treatment;ACS Omega;2019-07-05
4. Characteristics of Al2O3/native oxide/n-GaN capacitors by post-metallization annealing;Semiconductor Science and Technology;2019-01-31
5. Brief Review of Surface Passivation on III-V Semiconductor;Crystals;2018-05-18
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