Brief Review of Surface Passivation on III-V Semiconductor-Reference-Cited by-同舟云学术

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Brief Review of Surface Passivation on III-V Semiconductor

Published:2018-05-18 Issue:5 Volume:8 Page:226
ISSN:2073-4352
Container-title:Crystals
language:en
Short-container-title:Crystals

Author:

Zhou Lu,Bo Baoxue,Yan Xingzhen,Wang Chao,Chi Yaodan,Yang Xiaotian

Publisher

MDPI AG

Subject

Inorganic Chemistry,Condensed Matter Physics,General Materials Science,General Chemical Engineering

Link

http://www.mdpi.com/2073-4352/8/5/226/pdf

Reference53 articles.

1. Sulfur passivation and contact methods for GaAs nanowire solar cells

2. Facet passivation of GaAs based LDs by plasma pretreatment and RF sputtered AlN film coating;Zhou;J. Light Wave Technol.,2013

3. Property improvement of Al2O3-InP metal oxide semicondcutor capacitors by surface nitridation;Cao;Chin. J. Vac. Sci. Technol.,2016

4. Defect state passivation at III-V oxide interfaces for complementary metal–oxide–semiconductor devices

5. Characteristics of liquid phase deposited SiO2on (NH4)2S-treated GaAs with an ultrathin Si interface passivation layer

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