Scanning tunneling spectroscopy study of erbium doped GaSb crystals
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370910
Reference16 articles.
1. Intracenter transitions in triply ionized erbium ions diffused into III‐V compound semiconductors
2. Impact excitation of the erbium‐related 1.54 μm luminescence peak in erbium‐doped InP
3. Photoluminescent properties of Er‐doped In1−xGaxP prepared by metalorganic vapor phase epitaxy
4. Photoluminescence spectroscopy of erbium implanted gallium nitride
5. Trap-mediated excitation of Er3+ photoluminescence in Er-implanted GaN
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1. Size effects on the electronic structure of ErSb nanoparticles embedded in the GaSb(001) surface;Physical Review B;2013-01-22
2. The role of Ce dopant on the electrical properties of GaSb single crystals, measured by far-infrared Fourier transform spectroscopy;Semiconductor Science and Technology;2009-02-04
3. Cathodoluminescence study of ytterbium doped GaSb;Materials Science and Engineering: B;2005-07
4. Study of Zn diffusion in n-type GaSb by cathodoluminescence and scanning tunneling spectroscopy;Materials Science and Engineering: B;2001-03
5. Study of GaSb Junction Devices by Cathodoluminescence and Scanning Tunneling Spectroscopy;MRS Proceedings;1999
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