Photoluminescence spectroscopy of erbium implanted gallium nitride
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120165
Reference13 articles.
1. Luminescence properties of erbium in III–V compound semiconductors
2. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials
3. Thermal quenching of Er3+‐related luminescence in In1−xGaxP
4. Intense erbium‐1.54‐μm photoluminescence from 2 to 525 K in ion‐implanted 4H, 6H, 15R, and 3C SiC
5. 1.54‐μm photoluminescence from Er‐implanted GaN and AlN
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