Intracenter transitions in triply ionized erbium ions diffused into III‐V compound semiconductors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100871
Reference7 articles.
1. Observation of enhanced single longitudinal mode operation in 1.5‐μm GaInAsP erbium‐doped semiconductor injection lasers
2. Single longitudinal mode operation of Er‐doped 1.5‐μm InGaAsP lasers
3. Photoluminescence optimization and characteristics of the rare‐earth element erbium implanted in GaAs, InP, and GaP
4. Incorporation of erbium in GaAs by liquid‐phase epitaxy
5. Photoluminescence excitation measurements on GaAs:Er grown by molecular‐beam epitaxy
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1. Scanning tunneling spectroscopy study of erbium doped GaSb crystals;Journal of Applied Physics;1999-08
2. Effect of Erbidum on the Luminescence Properties of GaSb Crystals;Solid State Phenomena;1998-12
3. Effect of erbium doping on the defect structure of GaSb crystals;Semiconductor Science and Technology;1998-12-01
4. High Temperature Luminescence Due to Er in Porous Si;Materials Science Forum;1997-12
5. The incorporation of erbium into molecular beam epitaxy grown gallium arsenide;Journal of Crystal Growth;1997-12
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