Observation of enhanced single longitudinal mode operation in 1.5‐μm GaInAsP erbium‐doped semiconductor injection lasers-Reference-Cited by-同舟云学术

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Observation of enhanced single longitudinal mode operation in 1.5‐μm GaInAsP erbium‐doped semiconductor injection lasers

Published:1986-12-22 Issue:25 Volume:49 Page:1686-1688
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tsang W. T.,Logan R. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.97266

Reference14 articles.

1. Rare earth activated luminescence in InP, GaP and GaAs

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