Trap-mediated excitation of Er3+ photoluminescence in Er-implanted GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120171
Reference15 articles.
1. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials
2. Thermal quenching of Er3+‐related luminescence in In1−xGaxP
3. 1.54‐μm photoluminescence from Er‐implanted GaN and AlN
4. Cathodoluminescence study of erbium and oxygen coimplanted gallium nitride thin films on sapphire substrates
5. Electroluminescence from erbium and oxygen coimplanted GaN
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