Current injection 154 µm light-emitting devices based on Er-doped GaN/AlGaN multiple quantum wells-Reference-Cited by-同舟云学术

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Current injection 154 µm light-emitting devices based on Er-doped GaN/AlGaN multiple quantum wells

Published:2016-10-10 Issue:11 Volume:6 Page:3476
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Al tahtamouni T. M.,Li J.,Lin J. Y.,Jiang H. X.

Funder

Army Research Office (ARO)

AT and T

Edward E. Whitacre Jr. College of Engineering, Texas Tech University

US-UK Fulbright Commission

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference28 articles.

1. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon

2. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials

3. Erbium-Doped Optical-Waveguide Amplifiers on Silicon

4. Erbium-doped a-plane GaN epilayers synthesized by metal-organic chemical vapor deposition

5. Erbium-doped GaN optical amplifiers operating at 1.54 μm

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Rare earth–doped semiconductor nanomaterials;Advanced Rare Earth-Based Ceramic Nanomaterials;2022

2. Resonant excitation of infrared emission in GaN:(Mn,Mg);Physical Review B;2018-06-28

3. Electro-optic guided-mode resonance tuning suppressible by optically induced screening in a vertically coupled hybrid GaN/Si microring resonator;Applied Physics Letters;2018-02-12

4. Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes;Scientific Reports;2017-12

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