Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-017-17033-6.pdf
Reference47 articles.
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2. Lozykowski, H. J., Jadwisienczak, W. M. & Brown, Ι. Visible cathodoluminescence of GaN doped with Dy, Er, and Tm. Appl. Phys. Lett. 74, 1129 (1999).
3. Favennec, P. N., L’Haridon, H., Salvi, M., Moutonnet, D. & Le Guillou, Y. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials. Electron. Lett. 25, 718–719 (1989).
4. Kenyon, A. J. Recent developments in rare-earth doped materials for optoelectronics. Progress in Quantum Elect. 26, 225–284 (2002).
5. Hömmerich, U. et al. Photoluminescence studies of rare earth (Er, Eu, Tm) in situ dopedGaN. Mat. Sc. Eng. B 105, 91–96 (2003).
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