Photoluminescence studies of rare earth (Er, Eu, Tm) in situ doped GaN-Reference-Cited by-同舟云学术

Photoluminescence studies of rare earth (Er, Eu, Tm) in situ doped GaN

Published:2003-12 Issue:1-3 Volume:105 Page:91-96
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Hömmerich U,Nyein Ei Ei,Lee D.S,Heikenfeld J,Steckl A.J,Zavada J.M

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference40 articles.

1. Optoelectronic Properties and Applications of Rare-Earth-Doped GaN

2. Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices

3. Growth of Eu Doped GaN and Electroluminescence from MIS Structure

4. Visible emission from electroluminescent devices using an amorphous AlN:Er3+ thin-film phosphor

5. Rare earth doped semiconductors. I, in: G.S. Pomerenke, P.B. Klein, D.W. Langer (Eds.), Proceedings of the Materials Research Society, Vol. 301, 1993.

Cited by 84 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Color-Tunable Photoluminescence of Hydroxyapatite Particles by Thermochemical Reactions of Organic Acids;The Journal of Physical Chemistry C;2024-05-23

2. Optical activation of praseodymium ions implanted in gallium nitride after ultra-high pressure annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-02

3. Molecular‐fusion Synthesis of Bright Green Fluorescent Carbon Dots for Cell Imaging;ChemNanoMat;2023-07-03

4. Microstructure Evolution of AlN:Eu Films at Different Annealing Temperatures;physica status solidi (a);2023-06-23

5. Closing the yellow gap with Eu- and Tb-doped GaN: one luminescent host resulting in three colours;Scientific Reports;2022-02-15