First-principles identification of defect levels in Er-doped GaN-Reference-Cited by-同舟云学术

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First-principles identification of defect levels in Er-doped GaN

Published:2016-10-21 Issue:12 Volume:10 Page:915-918
ISSN:1862-6254
Container-title:physica status solidi (RRL) - Rapid Research Letters
language:en
Short-container-title:Phys. Status Solidi RRL

Author:

Hoang Khang¹

Affiliation:

1. Center for Computationally Assisted Science and Technology; North Dakota State University; Fargo, North Dakota 58108 USA

Funder

U.S. Department of Energy Grant

Center for Computationally Assisted Science and Technology (CCAST) at North Dakota State University

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssr.201600273/fullpdf

Reference26 articles.

1. Optoelectronic Properties and Applications of Rare-Earth-Doped GaN

2. Electrical characterization of Er- and Pr-implanted GaN films

3. Excitation dynamics of the 1.54μm emission in Er doped GaN synthesized by metal organic chemical vapor deposition

4. Hybrid density functional study of optically active Er3+ centers in GaN

5. Structure and electrical activity of rare-earth dopants in GaN

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crystal-field analysis of photoluminescence from orthorhombic Eu centers and energy transfer from host to Eu in GaN co-doped with Mg and Eu;Journal of Luminescence;2024-06

2. An efficiently excited Eu3+ luminescent site formed in Eu,O-codoped GaN;AIP Advances;2024-02-01

3. Crystal-field analysis and models of Eu-emission centers with C3 symmetry in in situ Eu- and Mg-codoping GaN layers;Journal of Luminescence;2023-10

4. Defects and Persistent Luminescence in Eu -Doped SrAl 2 O 4;Physical Review Applied;2023-02-23

5. Rare-earth defects in GaN: A systematic investigation of the lanthanide series;Physical Review Materials;2022-04-15

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