Structure and electrical activity of rare-earth dopants in GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1710710
Reference31 articles.
1. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials
2. Kinetics of luminescence of isoelectronic rare-earth ions in III-V semiconductors
3. Photoluminescence quenching in Er-doped compounds
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