Elucidation of the excitation mechanism of Tb ions doped in AlxGa1−xN grown by OMVPE toward a wavelength-stable green emitter

Author:

Komai R.1,Ichikawa S.12ORCID,Hanzawa H.3,Tatebayashi J.1ORCID,Fujiwara Y.1

Affiliation:

1. Graduate School of Engineering, Osaka University, 2-1, Yamadaoka, Suita, Osaka 565-0871, Japan

2. Research Center for UHVEM, Osaka University, 7-1, Mihogaoka, Ibaraki, Osaka 567-0047, Japan

3. Graduate School of Engineering Science, Osaka University, 1-3, Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan

Funder

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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1. Characteristics of Light‐Emitting Diodes Based on Terbium‐Doped Ga2O3 Films;physica status solidi (RRL) – Rapid Research Letters;2024-01-28

2. Growth and characteristics of terbium doped Ga2O3 luminescent films;Journal of Crystal Growth;2023-10

3. Monolithic Vertically Stacked RGB LEDs for Small Micro-LED Displays with Ultrahigh Definition;2023 International Conference on Electronics Packaging (ICEP);2023-04-19

4. Defects in semiconductors;Journal of Applied Physics;2022-10-21

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