Characteristics of Light‐Emitting Diodes Based on Terbium‐Doped Ga2O3 Films

Abstract

Terbium (Tb)‐doped Ga2O3 films are grown on Si substrates by pulsed laser deposition at a substrate temperature of 500 °C. The electroluminescence (EL) peaks detected at 488, 543, 587, and 622 nm from the Tb‐doped Ga2O3/Si light‐emitting diodes (LEDs) correspond to the 5D4–7F6, 5D4–7F5, 5D4–7F4, and 5D4–7F3 transitions, respectively. The EL intensity initially increases with current up to 70 mA, followed by a decrease at higher currents. Notably, there is no discernible shift in the EL spectra peaks as the operating current varies from 5 to 90 mA. These findings imply that the Tb‐doped Ga2O3/Si LED, characterized by its remarkable wavelength stability, holds significant potential for advancing the development of highly efficient LEDs across diverse applications.