GaN avalanche photodiodes grown on m-plane freestanding GaN substrate

Author:

Vashaei Z.,Cicek E.,Bayram C.,McClintock R.,Razeghi M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 38 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. The Effect of Nanopipes and an Inserted n‐AlGaN Interlayer on GaN Avalanche Photodiodes Performance;physica status solidi (a);2023-12-03

2. Electronic Materials Accelerating the Development of Ubiquitous Devices;Journal of the Society of Materials Science, Japan;2023-08-15

3. Improved performance of AlGaN solar-blind avalanche photodiodes with dual multiplication layers;Optical and Quantum Electronics;2022-12-21

4. AlGaN ‐based solar‐blind avalanche photodetectors with gradually doped charge layer;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2022-05-22

5. Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays;Light: Science & Applications;2021-04-30

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