III-nitride avalanche photodiodes-Reference-Cited by-同舟云学术

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III-nitride avalanche photodiodes

Published:2009-01-24 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

McClintock Ryan,Pau Jose L.,Bayram Can,Fain Bruno,Giedraitis Paul,Razeghi Manijeh,Ulmer Melville P.

Publisher

SPIE

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. AlGaN solar-blind ultraviolet avalanche photodiodes with a p-graded AlxGa1-xN layer and high/low Al-content AlGaN multiplication layer;Applied Physics A;2021-05-25

2. Direct observation of reach-through behavior in back-illuminated algan avalanche photodiode with separate absorption and multiplication structure;Journal of Physics D: Applied Physics;2020-07-28

3. Surface smoothing with BCl3 plasma post-treatment to improve the performance of GaN avalanche photodiodes;Japanese Journal of Applied Physics;2019-09-11

4. Trap-assisted tunneling in AlGaN avalanche photodiodes;AIP Advances;2017-06

5. Ionization-Enhanced AlGaN Heterostructure Avalanche Photodiodes;IEEE Electron Device Letters;2017-04

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