Trap-assisted tunneling in AlGaN avalanche photodiodes-Reference-Cited by-同舟云学术

Trap-assisted tunneling in AlGaN avalanche photodiodes

Published:2017-06 Issue:6 Volume:7 Page:065016
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Shao Z. G.¹,Gu Q. J.¹,Yang X. F.¹,Zhang J.¹,Kuang Y. W.¹,Zhang D. B.¹,Yu H. L.¹,Hong X. K.¹,Feng J. F.¹,Liu Y. S.¹

Affiliation:

1. College of Physics and Electronic Engineering, Changshu Institute of Technology and Jiangsu Laboratory of Advanced Functional Materials, Changshu 215500, China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4984214

Reference19 articles.

1. Comparison of AlGaN p–i–n ultraviolet avalanche photodiodes grown on free-standing GaN and sapphire substrates

2. Avalanche multiplication in AlGaN based solar-blind photodetectors

3. III-nitride avalanche photodiodes

4. Properties of an AlGaN/AlN distributed-Bragg-reflector structure

5. Back-illuminated separate absorption and multiplication GaN avalanche photodiodes

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3. AlGaN avalanche Schottky diodes with high Al-content;Japanese Journal of Applied Physics;2019-05-14

4. Analysis of Defect-Related Electrical Fatigue in 4H-SiC Avalanche Photodiodes;IEEE Photonics Technology Letters;2018-05-15

5. Avalanche multiplication in AlGaN-based heterostructures for the ultraviolet spectral range;Applied Physics Letters;2018-04-09