Low Dark Current Deep UV AlGaN Photodetectors on AlN Substrate
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, Center for Quantum Devices, Northwestern University, Evanston, IL, USA
Funder
Walter P. Murphy Society Fellowship at Northwestern University
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics
Link
http://xplorestaging.ieee.org/ielx7/3/9736675/09721286.pdf?arnumber=9721286
Reference22 articles.
1. III-nitride Ultraviolet Light Emitting Sources
2. The Influence of n-AlGaN Inserted Layer on the Performance of Back-Illuminated AlGaN-Based p-i-n Ultraviolet Photodetectors
3. The optimized growth of AlN templates for back-illuminated AlGaN-based solar-blind ultraviolet photodetectors by MOCVD
4. Material-to-device performance correlation for AlGaN-based solar-blind p–i–n photodiodes
5. Lateral epitaxial overgrowth of GaN films on sapphire and silicon substrates
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