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Evolution of hydrogen and helium co-implanted single-crystal silicon during annealing

  • Published:2001-10-15 Issue:8 Volume:90 Page:3780-3786
  • ISSN:0021-8979
  • Container-title:Journal of Applied Physics
  • language:en
  • Short-container-title:Journal of Applied Physics

Author:

Duo Xinzhong,Liu Weili,Zhang Miao,Wang Lianwei,Lin Chenglu,Okuyama M.,Noda M.,Cheung Wing-Yiu,Wong S. P.,Chu Paul K.,Hu Peigang,Wang S. X.,Wang L. M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Cited by 30 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of He and H relative depth distributions on the result of sequential He+ and H+ ion implantation and annealing in silicon;Journal of Applied Physics;2018-04-28

2. Surface modification of single crystal LiTaO3 by H and He implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2017-02

3. Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon;Journal of Applied Physics;2016-04-07

4. Influence of hydrogen fluence on surface blistering of H and He co-implanted Ge;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-02

5. Inverted Pyramidal Texturing of Silicon Through Blisters in Silicon Nitride;IEEE Journal of Photovoltaics;2015-05
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