Impact of He and H relative depth distributions on the result of sequential He+ and H+ ion implantation and annealing in silicon
Author:
Affiliation:
1. CEMES-CNRS and Université de Toulouse, 29 rue J. Marvig, 31055 Toulouse, France
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5012505
Reference22 articles.
1. Efficient production of silicon-on-insulator films by co-implantation of He+ with H+
2. Blistering of silicon crystals by low keV hydrogen and helium ions
3. Effects in synergistic blistering of silicon by coimplantation of H, D, and He ions
4. On the microstructure of Si coimplanted with H+ and He+ ions at moderate energies
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