Linear optical properties of a heavily Mg-doped Al0.09Ga0.91N epitaxial layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124102
Reference17 articles.
1. p-type conduction in as-grown Mg-doped GaN grown by metalorganic chemical vapor deposition
2. Optical-field calculations for lossy multiple-layer AlxGa1−xN/InxGa1−xN laser diodes
3. Excitation of a higher order transverse mode in an optically pumped In0.15Ga0.85N/In0.05Ga0.95N multiquantum well laser structure
4. Optical constants of epitaxial AlGaN films and their temperature dependence
5. Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements
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3. Third order nonlinear susceptibility of InN at near band-gap wavelengths;Applied Physics Letters;2007-02-26
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