Excitation of a higher order transverse mode in an optically pumped In0.15Ga0.85N/In0.05Ga0.95N multiquantum well laser structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118659
Reference10 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. Ridge‐geometry InGaN multi‐quantum‐well‐structure laser diodes
3. Optical gain and carrier lifetime of InGaN multi‐quantum well structure laser diodes
4. Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer
5. Room‐temperature violet stimulated emission from optically pumped AlGaN/GaInN double heterostructure
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