Optical optimization of InGaN/GaN edge-emitting lasers with reduced AlGaN cladding thickness
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference12 articles.
1. Elimination of AlGaN epilayer cracking by spatially patterned AlN mask
2. Investigation of longitudinal‐optical phonon‐plasmon coupled modes in highly conducting bulk GaN
3. Efficient analysis of periodic structures
4. Analysis of wavelength-dependent performance variations of GaN-based ultraviolet lasers
5. Highly doped GaN: a material for plasmonic claddings for blue/green InGaN laser diodes
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of AlInGaN electron barrier layer with different aluminum components on the photoelectric properties of GaN-based laser;Fifth International Conference on Optoelectronic Science and Materials (ICOSM 2023);2024-02-01
2. Low threshold current density and high power InGaN-based blue-violet laser diode with an asymmetric waveguide structure;Optics Express;2023-02-16
3. Stimulated emission threshold in thick GaN epilayers: interplay between charge carrier and photon dynamics;Optics & Laser Technology;2021-02
4. Performance enhancement of the GaN-based laser diode by using an unintentionally doped GaN upper waveguide;Japanese Journal of Applied Physics;2018-06-14
5. Effect of GaN substrate thickness on the optical field of InGaN lasers diodes;Revista Mexicana de Física;2018-04-30
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