Elimination of AlGaN epilayer cracking by spatially patterned AlN mask-Reference-Cited by-同舟云学术

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Elimination of AlGaN epilayer cracking by spatially patterned AlN mask

Published:2006-03-20 Issue:12 Volume:88 Page:121124
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sarzyński Marcin,Kryśko Marcin,Targowski Grzegorz,Czernecki Robert,Sarzyńska Agnieszka,Libura Adam,Krupczyński Wiktor,Perlin Piotr,Leszczyński Michał

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2189788

Reference11 articles.

1. Fabrication and performance of GaN electronic devices

2. Dislocation Density of GaN Grown by Hydride Vapor Phase Epitaxy

3. Metal organic vapour phase epitaxy of GaN and lateral overgrowth

4. Bulk and homoepitaxial GaN-growth and characterisation

5. Blue lasers on high pressure grown GaN single crystal substrates

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