Beyond Quantum Efficiency Limitations Originating from the Piezoelectric Polarization in Light-Emitting Devices-Reference-Cited by-同舟云学术

Beyond Quantum Efficiency Limitations Originating from the Piezoelectric Polarization in Light-Emitting Devices

Published:2019-07-03 Issue:8 Volume:6 Page:1963-1971
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Muziol Grzegorz¹^ORCID,Turski Henryk¹,Siekacz Marcin¹,Szkudlarek Krzesimir¹,Janicki Lukasz²^ORCID,Baranowski Michal²^ORCID,Zolud Sebastian²,Kudrawiec Robert²^ORCID,Suski Tadeusz¹,Skierbiszewski Czeslaw¹³

Affiliation:

1. Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142 Warsaw, Poland

2. Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland

3. TopGaN Ltd, Sokolowska 29/37, 01-142 Warsaw, Poland

Funder

European Regional Development Fund

Narodowe Centrum Nauki

Fundacja na rzecz Nauki Polskiej

Narodowe Centrum Badan i Rozwoju

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.9b00327

Reference74 articles.

1. Spontaneous polarization and piezoelectric constants of III-V nitrides

2. Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect

3. Giant electric fields in unstrained GaN single quantum wells

4. Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

5. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. How to Make Semi‐Polar InGaN Light Emitting Diodes with High Internal Quantum Efficiency: The Importance of the Internal Field;Laser & Photonics Reviews;2024-08-31

2. Hydrostatic Pressure as a Tool for the Study of Semiconductor Properties—An Example of III–V Nitrides;Materials;2024-08-13

3. Synthesis of praseodymium doped lutetium and gadolinium aluminum garnets modified by scandium and boron to improve luminescence properties;Ceramics International;2024-08

4. Light emission at reverse voltage in a wide-well (In,Ga)N/GaN light-emitting diode;Physical Review Applied;2024-05-15

5. Optical Gain in AlGaN Quantum Wells: Impact of Higher Energy States;IEEE Photonics Journal;2024-04