Optical Gain in AlGaN Quantum Wells: Impact of Higher Energy States-Reference-Cited by-同舟云学术

Optical Gain in AlGaN Quantum Wells: Impact of Higher Energy States

Published:2024-04 Issue:2 Volume:16 Page:1-5
ISSN:1943-0655
Container-title:IEEE Photonics Journal
language:
Short-container-title:IEEE Photonics J.

Author:

Kölle Sebastian¹^ORCID,Römer Friedhard¹^ORCID,Cardinali Giulia²^ORCID,Schulz Alexander²^ORCID,Susilo Norman²^ORCID,Vidal Daniel Hauer²^ORCID,Wernicke Tim²^ORCID,Kneissl Michael²^ORCID,Witzigmann Bernd¹^ORCID

Affiliation:

1. Institute for Optoelectronics, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen, Germany

2. Institute of Solid State Physics, Technische Universität Berlin, Berlin, Germany

Funder

Leibniz Association joint project UVSimTech

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/4563994/10439256/10475434.pdf?arnumber=10475434

Reference31 articles.

1. Semiconductor-Laser Fundamentals

2. Key temperature-dependent characteristics of AlGaN-based UV-C laser diode and demonstration of room-temperature continuous-wave lasing

3. Design and characterization of a low-optical-loss UV-C laser diode

4. Analysis of carrier injection efficiency of AlGaN UV-B laser diodes based on the relationship between threshold current density and cavity length

5. Carrier Transport in a Deep Ultraviolet Mixed Quantum Well Light Emitting Diode

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