Performance enhancement of the GaN-based laser diode by using an unintentionally doped GaN upper waveguide-Reference-Cited by-同舟云学术

Performance enhancement of the GaN-based laser diode by using an unintentionally doped GaN upper waveguide

Published:2018-06-14 Issue:7 Volume:57 Page:070307
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Liang Feng,Zhao De-Gang,Jiang De-Sheng,Liu Zong-Shun,Zhu Jian-Jun,Chen Ping,Yang Jing,Liu Wei,Liu Shuang-Tao,Xing Yao,Zhang Li-Qun,Wang Wen-Jie,Li Mo,Zhang Yuan-Tao,Du Guo-Tong

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=7/a=070307/pdf

Reference35 articles.

1. Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

2. Gallium nitride light sources for optical coherence tomography

3. Recent advances in high power blue laser diodes

4. III-Nitride Ultraviolet Emitters

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High‐Power GaN‐Based Blue Laser Diodes Degradation Investigation and Anti‐aging Solution;Advanced Photonics Research;2024-09-04

2. Low threshold current density and high power InGaN-based blue-violet laser diode with an asymmetric waveguide structure;Optics Express;2023-02-16

3. 复合电子阻挡层优化InGaN基紫色激光器光电性能;Acta Optica Sinica;2023

4. p-Type Behavior of Carbon on n-Type GaN Schottky-Barrier Diodes Doped by Neutron Transmutation Effects;IEEE Transactions on Electron Devices;2023

5. Theoretical Optical Output Power Improvement of InGaN-Based Violet Laser Diode Using AlGaN/GaN Composite Last Quantum Barrier;Nanomaterials;2022-11-12