Optical-field calculations for lossy multiple-layer AlxGa1−xN/InxGa1−xN laser diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.368185
Reference33 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime
3. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
4. Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire Substrates
5. InGaN Laser Diode Grown on 6H-SiC Substrate Using Low-Pressure Metal Organic Vapor Phase Epitaxy
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