The role of La surface chemistry in the passivation of Ge
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3284655
Reference13 articles.
1. Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials
2. Surface Defects and Passivation of Ge and III–V Interfaces
3. Effective electrical passivation of Ge(100) for high-k gate dielectric layers using germanium oxide
4. Opportunities and challenges for Ge CMOS – Control of interfacing field on Ge is a key (Invited Paper)
5. Distinctly different thermal decomposition pathways of ultrathin oxide layer on Ge and Si surfaces
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1. Interface formation and Schottky barrier height for Y, Nb, Au, and Pt on Ge as determined by hard x-ray photoelectron spectroscopy;AIP Advances;2023-01-01
2. A facile synthesis of shell-shaped GeOx (x≤2) islands by metal-assisted chemical etching of Ge and their optoelectronic properties;Optical Materials;2022-09
3. Improvement of Ge MOS Electrical and Interfacial Characteristics by using NdAlON as Interfacial Passivation Layer;Journal of Wuhan University of Technology-Mater. Sci. Ed.;2021-08
4. Formation and characterization of holmium oxide on germanium‐based metal‐oxide‐semiconductor capacitor;International Journal of Energy Research;2021-04-13
5. Growth mechanisms and characteristics of Sm2O3 based on Ge semiconductor through oxidation and nitridation;Applied Surface Science;2021-04
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