Determination of the fluorine content ina‐Si:H:F by infrared spectroscopy, electron probe microanalysis, x‐ray photoelectron spectroscopy, and secondary ion mass spectrometry-Reference-Cited by-同舟云学术

Determination of the fluorine content ina‐Si:H:F by infrared spectroscopy, electron probe microanalysis, x‐ray photoelectron spectroscopy, and secondary ion mass spectrometry

Published:1989-06-15 Issue:12 Volume:65 Page:5154-5160
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Langford A. A.,Fleet M. L.,Nelson A. J.,Asher S. E.,Goral J. P.,Mason A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.343168

Reference18 articles.

1. Electrical and optical properties of amorphous Si:F:H alloys

2. Properties of a-Si : H : F deposited in SiF4/SiH4/Ar Gas mixtures by a glow-discharge technique

3. Bonding of fluorine in amorphous hydrogenated silicon

4. Infrared spectra of fluorinated amorphous silicon prepared by D.C. glow discharge

5. Structural model of sputtered fluorinated amorphous silicon

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