Structural model of sputtered fluorinated amorphous silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.329537
Reference11 articles.
1. Electronic properties of substitutionally doped amorphous Si and Ge
2. Electrical and optical properties of amorphous Si:F:H alloys
3. Conductivity andp‐ntype control of fluorinated amorphous silicon (a‐Si:F) without incorporating hydrogen
4. A heat‐resisting new amorphous silicon
5. Amorphous-silicon field-effect device and possible application
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1. Neutron scattering studies of hydrogenated, deuterated and fluorinated amorphous silicon;Journal of Physics: Condensed Matter;2007-09-27
2. Development of Stable a-Si Solar Cells with Wide-Gap a-Si:H i-layers Deposited by an Inert Gas Plasma Treatment Method;Japanese Journal of Applied Physics;1998-03-15
3. Improved fluorinated hydrogenated amorphous silicon alloys prepared using the hot-plasma-box glow-discharge technique;Philosophical Magazine B;1994-08
4. Vibrational modes in electrodeposited amorphous silicon: FT-IR analysis;Journal of Materials Science;1992
5. Effect of fluorine on the structural and electronic properties ofa-Si:H:F;Physical Review B;1990-04-15
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