Development of Stable a-Si Solar Cells with Wide-Gap a-Si:H i-layers Deposited by an Inert Gas Plasma Treatment Method
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Published:1998-03-15
Issue:Part 1, No. 3A
Volume:37
Page:771-775
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Maruyama Eiji,Hishikawa Yoshihiro,Tanaka Makoto,Kiyama Seiichi,Tsuda Shinya
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering