Properties of a-Si : H : F deposited in SiF4/SiH4/Ar Gas mixtures by a glow-discharge technique
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. A new amorphous silicon-based alloy for electronic applications
2. Electrical and optical properties of amorphous Si:F:H alloys
3. Properties of heavily doped GDSi with low resistivity
4. Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. a‐Si:F anda‐Si:F:H prepared by ion‐beam‐assisted reactive deposition;Journal of Applied Physics;1992-08-15
2. Effect of fluorine on the structural and electronic properties ofa-Si:H:F;Physical Review B;1990-04-15
3. Determination of the fluorine content ina‐Si:H:F by infrared spectroscopy, electron probe microanalysis, x‐ray photoelectron spectroscopy, and secondary ion mass spectrometry;Journal of Applied Physics;1989-06-15
4. Light-Soaking of a-Si:H,F Films Deposited from SiF4 and H2;MRS Proceedings;1989
5. Fluorine-Induced Microvoids in Amorphous Silicon;MRS Proceedings;1989
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