Alternative mechanism for misfit dislocation generation during high-temperature Ge(Si)/Si (001) island growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1506414
Reference28 articles.
1. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
2. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
3. Cyclic Growth of Strain-Relaxed Islands
4. Relaxation mechanism of Ge islands/Si(001) at low temperature
5. Structural Transition in Large-Lattice-Mismatch Heteroepitaxy
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