A predictive model for plastic relaxation in (0001)-oriented wurtzite thin films and heterostructures
Author:
Affiliation:
1. Leibniz Institute for Crystal Growth, Max-Born-Str. 2, 12489 Berlin, Germany
2. OSRAM Opto Semiconductors GmbH, Leibnizstraße 4, 93055 Regensburg, Germany
Funder
Bundesministerium für Bildung und Forschung
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5025813
Reference39 articles.
1. J. H. van der Merwe , Proc. Phys. Soc. Sect. A 63, 616 (1950).
2. Equilibrium Structure of a Thin Epitaxial Film
3. Use of misfit strain to remove dislocations from epitaxial thin films
4. Strain relaxation kinetics in Si1−xGex/Si heterostructures
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Elastic and inelastic strain in submicron-thick ZnO epilayers grown on r-sapphire substrates by metal–organic vapour phase deposition;Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials;2024-02-13
2. Non-planar growth of high Al-mole-fraction AlGaN heterostructures on patterned GaN substrates for ultraviolet laser diodes;Applied Physics Letters;2023-09-25
3. Effect of layer structure of AlN interlayer on the strain in GaN layers during metal-organic vapor phase epitaxy on Si substrates;Journal of Applied Physics;2023-04-24
4. Non-planar growth of high Al-mole-fraction AlGaN on patterned GaN platforms for mitigating strain-induced cracks beyond the critical layer thickness;Journal of Crystal Growth;2023-04
5. Formation of a-type dislocations near the InGaN/GaN interface during post-growth processing of epitaxial structures;Journal of Applied Physics;2023-01-25
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3