Microstructure analysis of novel ternary NiSi2−xAlx silicide layers on Si(001) formed by solid-state reaction
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4718008
Reference24 articles.
1. Silicide Technology for Integrated Circuits
2. Towards implementation of a nickel silicide process for CMOS technologies
3. Diffusion in intermetallic compounds with the CaF2structure: A marker study of the formation of NiSi2thin films
4. Radioactive Ni∗ tracer study of the nickel silicide growth mechanism
5. Analysis of irregular increase in sheet resistance of Ni silicides on transition from NiSi to NiSi2
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Formation of uniform and homogeneous ternary NiSi2−x Al x on Si(001) by an Al interlayer mediation;Applied Physics Express;2019-12-03
2. Impact of Al addition on the formation of Ni germanosilicide layers under different temperature annealing *;Chinese Physics B;2017-08
3. Influence of Al addition on phase transformation and thermal stability of nickel silicides on Si(001);Journal of Alloys and Compounds;2014-02
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