Formation of uniform and homogeneous ternary NiSi2−x Al x on Si(001) by an Al interlayer mediation-Reference-Cited by-同舟云学术

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Formation of uniform and homogeneous ternary NiSi2−x Al x on Si(001) by an Al interlayer mediation

Published:2019-12-03 Issue:1 Volume:13 Page:015505
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Yong Kai,Ping Yunxia,Liu Wei,Yang Jun,Yu Wenjie,Xue Zhongying,Wei Xing,Wu Aimin,Zhang Bo

Funder

National Natural Science Foundation of China

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

https://iopscience.iop.org/article/10.7567/1882-0786/ab5ad2/pdf

Reference15 articles.

1. Towards implementation of a nickel silicide process for CMOS technologies

2. Compatibility of NiSi in the self-aligned suicide process for deep submicrometer devices

3. Surface-energy triggered phase formation and epitaxy in nanometer-thick Ni1−xPtx silicide films

4. Ultrathin Ni Silicides With Low Contact Resistance on Strained and Unstrained Silicon

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of ultra-thin aluminium interlayer on Schottky barrier parameters of NiGe/n-type Ge Schottky barrier diode;Acta Physica Sinica;2022

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