Surface-energy triggered phase formation and epitaxy in nanometer-thick Ni1−xPtx silicide films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3291679
Reference15 articles.
1. Metal Silicides in CMOS Technology: Past, Present, and Future Trends
2. Systematic TLM Measurements of NiSi and PtSi Specific Contact Resistance to n- and p-Type Si in a Broad Doping Range
3. Enhancement of thermal stability of NiSi films on (100)Si and (111)Si by Pt addition
4. Self-aligned silicides for Ohmic contacts in complementary metal–oxide–semiconductor technology: TiSi2, CoSi2, and NiSi
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