Ultrathin body InAs tunneling field-effect transistors on Si substrates-Reference-Cited by-同舟云学术

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Ultrathin body InAs tunneling field-effect transistors on Si substrates

Published:2011-03-14 Issue:11 Volume:98 Page:113105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ford Alexandra C.,Yeung Chun Wing,Chuang Steven,Kim Ha Sul,Plis Elena,Krishna Sanjay,Hu Chenming,Javey Ali

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3567021

Reference20 articles.

1. Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

2. Strain engineering of epitaxially transferred, ultrathin layers of III-V semiconductor on insulator

3. off-State Current Limits of Narrow Bandgap MOSFETs

4. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

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